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1. product pro?le 1.1 general description the bf1208d is a combination of two dual gate mosfet ampli?ers with shared source and gate2 leads and an integrated switch. the integrated switch is operated by the gate1 bias of ampli?er b. the source and substrate are interconnected. internal bias circuits enable dc stabilization and a very good cross modulation performance during automatic gain control (agc). integrated diodes between the gates and source protect against excessive input voltage surges. the transistor has a sot666 micro-miniature plastic package. 1.2 features n two low noise gain controlled ampli?ers in a single package. one with a fully integrated bias and one with a partly integrated bias n internal switch to save external components n superior cross modulation performance during agc n high forward transfer admittance n high forward transfer admittance to input capacitance ratio 1.3 applications n gain controlled low noise ampli?ers for vhf and uhf applications with 5 v supply voltage u digital and analog television tuners u professional communication equipment bf1208d dual n-channel dual gate mosfet rev. 01 16 may 2007 product data sheet caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 2 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 1.4 quick reference data [1] t sp is the temperature at the soldering point of the source lead. [2] calculated from s-parameters. [3] measured in figure 33 test circuit. [4] measured in figure 34 test circuit. 2. pinning information table 1. quick reference data per mosfet unless otherwise speci?ed. symbol parameter conditions min typ max unit v ds drain-source voltage dc - - 6 v i d drain current dc - - 30 ma p tot total power dissipation t sp 109 c [1] - - 180 mw | y fs | forward transfer admittance f = 100 mhz; t j = 25 c ampli?er a; i d =19ma 26 31 41 ms ampli?er b; i d =15ma 25 30 40 ms c iss(g1) input capacitance at gate1 f = 100 mhz ampli?er a [2] - 2.1 2.6 pf ampli?er b [2] - 2.1 2.6 pf c rss reverse transfer capacitance f = 100 mhz [2] -30-ff nf noise ?gure y s =y s(opt) ampli?er a; f = 400 mhz - 0.9 1.5 db ampli?er b; f = 800 mhz - 1.4 2.0 db xmod cross modulation input level for k = 1 %; f w = 50 mhz; f unw = 60 mhz at 40 db agc ampli?er a [3] 102 105 - db m v ampli?er b [4] 102 105 - db m v t j junction temperature - - 150 c table 2. discrete pinning pin description simpli?ed outline symbol 1 gate1 (amp a) 2 gate2 3 gate1 (amp b) 4 drain (amp b) 5 source 6 drain (amp a) 123 4 5 6 sym089 g1b g1a g2 s da db amp b amp a
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 3 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 3. ordering information 4. marking 5. limiting values [1] t sp is the temperature at the soldering point of the source lead. table 3. ordering information type number package name description version bf1208d - plastic surface-mounted package; 6 leads sot666 table 4. marking codes type number marking code bf1208d 4a table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per mosfet v ds drain-source voltage dc - 6 v i d drain current dc - 30 ma i g1 gate1 current - 10 ma i g2 gate2 current - 10 ma p tot total power dissipation t sp 109 c [1] - 180 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c fig 1. power derating curve t sp (?c) 0 200 150 50 100 001aac193 100 150 50 200 250 p tot (mw) 0
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 4 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 6. thermal characteristics 7. static characteristics [1] r g1 connects gate1 (b) to v gg = 0 v (see figure 3 ). [2] r g1 connects gate1 (b) to v gg = 5 v (see figure 3 ). table 6. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 225 k/w table 7. static characteristics t j =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit per mosfet; unless otherwise speci?ed v (br)dss drain-source breakdown voltage v g1-s =v g2-s =0v; i d =10 m a ampli?er a 6 - - v ampli?er b 6 - - v v (br)g1-ss gate1-source breakdown voltage v g2-s =v ds =0v; i g1-s =10ma 6 - 10 v v (br)g2-ss gate2-source breakdown voltage v g1-s =v ds =0v; i g2-s =10ma 6 - 10 v v f(s-g1) forward source-gate1 voltage v g2-s =v ds =0v; i s-g1 = 10 ma 0.5 - 1.5 v v f(s-g2) forward source-gate2 voltage v g1-s =v ds =0v; i s-g2 = 10 ma 0.5 - 1.5 v v g1-s(th) gate1-source threshold voltage v ds =5v; v g2-s =4v; i d = 100 m a 0.3 - 1.0 v v g2-s(th) gate2-source threshold voltage v ds =5v; v g1-s =5v; i d = 100 m a 0.4 - 1.0 v i ds drain-source current v g2-s =4v; v ds(b) =5v; r g1 =86k w ampli?er a; v ds(a) =5v [1] 14 - 24 ma ampli?er b [2] 10 - 20 ma i g1-s gate1 cut-off current v g2-s =v ds(a) =0v ampli?er a; v g1-s(a) =5v; i d(b) =0a - - 50 na ampli?er b; v g1-s(b) =5v; v ds(b) = 0 v - - 50 na i g2-s gate2 cut-off current v g2-s =4v; v g1-s(b) =0v; v g1-s(a) =v ds(a) =v ds(b) =0v - - 20 na
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 5 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 8. dynamic characteristics 8.1 dynamic characteristics for ampli?er a (1) i d(b) ; r g1 =68k w . (2) i d(b) ; r g1 =86k w . (3) i d(b) ; r g1 = 100 k w . (4) i d(a) ; r g1 = 100 k w . (5) i d(a) ; r g1 =86k w . (6) i d(a) ; r g1 =68k w . v gg = 5 v: ampli?er a is off; ampli?er b is on. v gg = 0 v: ampli?er a is on; ampli?er b is off. fig 2. drain currents of mosfet a and b as a function of v gg fig 3. functional diagram v gg (v) 05 4 23 1 001aag356 8 12 4 16 20 i d (ma) 0 (1) (2) (3) (4) (5) (6) 001aac205 r g1 v gg g1b g2 g1a db s da table 8. dynamic characteristics for ampli?er a [1] common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 19 ma; unless otherwise speci?ed. symbol parameter conditions min typ max unit | y fs | forward transfer admittance f = 100 mhz; t j =25 c263141ms c iss(g1) input capacitance at gate1 f = 100 mhz [2] - 2.1 2.6 pf c iss(g2) input capacitance at gate2 f = 100 mhz [2] - 3.4 - pf c oss output capacitance f = 100 mhz [2] - 0.8 - pf c rss reverse transfer capacitance f = 100 mhz [2] -30- ff g tr transducer power gain b s =b s(opt) ; b l =b l(opt) f = 200 mhz; g s = 2 ms; g l = 0.5 ms 32 36 40 db f = 400 mhz; g s = 2 ms; g l = 1 ms 28 32 36 db f = 800 mhz; g s = 3.3 ms; g l =1ms 24 28 33 db nf noise ?gure f = 11 mhz; g s = 20 ms; b s = 0 s - 3.0 - db f = 400 mhz; y s =y s(opt) - 0.9 1.5 db f = 800 mhz; y s =y s(opt) - 1.1 1.7 db
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 6 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet [1] for the mosfet not in use: v g1-s(b) = 0 v; v ds(b) =0v. [2] calculated from s-parameters. [3] measured in figure 33 test circuit. 8.1.1 graphics for ampli?er a xmod cross modulation input level for k = 1 %; f w = 50 mhz; f unw =60mhz [3] at 0 db agc 90 - - db m v at 10 db agc - 90 - db m v at 20 db agc - 99 - db m v at 40 db agc 102 105 - db m v table 8. dynamic characteristics for ampli?er a [1] continued common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 19 ma; unless otherwise speci?ed. symbol parameter conditions min typ max unit (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(a) =5v; v g1-s(b) =v ds(b) =0v; t j =25 c. (1) v g1-s(a) = 1.8 v. (2) v g1-s(a) = 1.7 v. (3) v g1-s(a) = 1.6 v. (4) v g1-s(a) = 1.5 v. (5) v g1-s(a) = 1.4 v. (6) v g1-s(a) = 1.3 v. (7) v g1-s(a) = 1.2 v. (8) v g1-s(a) = 1.1 v. (9) v g1-s(a) =1v. v g2-s =4v; v g1-s(b) =v ds(b) =0v; t j =25 c. fig 4. ampli?er a: transfer characteristics; typical values fig 5. ampli?er a: output characteristics; typical values v g1-s (v) 02 1.6 0.8 1.2 0.4 001aaa554 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (7) (6) 001aaa555 v ds (v) 06 4 2 16 8 24 32 i d (ma) 0 (2) (3) (4) (6) (7) (9) (8) (5) (1)
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 7 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. v ds(a) =5v; v g1-s(b) =v ds(b) =0v; t j =25 c. v ds(a) =5v; v g2-s =4v; v ds(b) =5v; v g1-s(b) =0v; t j =25 c. i d(b) = internal gate1 current = current in pin drain (amp b) if mosfet (b) is switched off. fig 6. ampli?er a: forward transfer admittance as a function of drain current; typical values fig 7. ampli?er a: drain current as a function of internal gate1 current; typical values i d (ma) 032 24 816 001aaa556 20 10 30 40 y fs (ms) 0 (1) (2) (3) (4) (5) (6) 001aac206 i d(b) ( m a) 060 40 20 8 12 4 16 20 i d(a) (ma) 0
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 8 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet v ds(a) =v ds(b) =v sup ; v g2-s =4v; t j =25 c; r g1 =86k w (connected to ground); see figure 3 . (1) v ds(b) =5v. (2) v ds(b) = 4.5 v. (3) v ds(b) =4v. (4) v ds(b) = 3.5 v. (5) v ds(b) =3v. (6) v ds(b) = 2.5 v. v ds(a) =5v; v g1-s(b) = 0 v; gate1 (amp a) is open; t j =25 c. fig 8. ampli?er a: drain current of ampli?er a as a function of supply voltage of a and b ampli?er; typical values fig 9. ampli?er a: drain current as a function of gate2 voltage; typical values v ds(a) =v ds(b) =5v; v g1-s(b) =0v; f w = 50 mhz; f unw = 60 mhz; t amb =25 c; see figure 33 . v ds(a) =v ds(b) =5v; v g1-s(b) = 0 v; f = 50 mhz; see figure 33 . fig 10. ampli?er a: unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values fig 11. ampli?er a: gain reduction as a function of agc voltage; typical values v sup (v) 05 4 23 1 001aaa558 8 12 4 16 20 i d (ma) 0 001aaa559 v g2-s (v) 06 4 2 16 8 24 32 i d (ma) 0 (1) (2) (3) (4) (5) (6) gain reduction (db) 050 40 20 30 10 001aac195 100 90 110 120 v unw (db m v) 80 v agc (v) 04 3 12 001aac196 30 20 40 10 0 gain reduction (db) 50
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 9 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet v ds(a) =v ds(b) =5v; v g1-s(b) = 0 v; f = 50 mhz; t amb =25 c; see figure 33 . v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma fig 12. ampli?er a: drain current as a function of gain reduction; typical values fig 13. ampli?er a: input admittance as a function of frequency; typical values v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma fig 14. ampli?er a: forward transfer admittance and phase as a function of frequency; typical values fig 15. ampli?er a: reverse transfer admittance and phase as a function of frequency; typical values gain reduction (db) 050 40 20 30 10 001aac197 12 20 28 i d (ma) 4 001aag357 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 b is g is 001aag358 10 1 10 2 y fs (ms) 10 - 1 - 10 - 1 - 10 2 j fs (deg) - 10 - 1 f (mhz) 10 10 3 10 2 y fs j fs 001aag359 10 2 10 10 3 y rs ( m s) 1 - 10 2 - 10 - 10 3 j rs (deg) - 1 f (mhz) 10 10 3 10 2 y rs j rs
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 10 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 8.1.2 scattering parameters for ampli?er a 8.1.3 noise data for ampli?er a v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma fig 16. ampli?er a: output admittance as a function of frequency; typical values 001aag360 1 10 - 1 10 b os , g os (ms) 10 - 2 f (mhz) 10 10 3 10 2 b os g os table 9. scattering parameters for ampli?er a v ds(a) =5v; v g2-s =4v; i d(a) = 19 ma; v ds(b) =0v;v g1-s(b) =0v; t amb = 25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.992 - 3.037 3.21 177.04 0.00763 87.34 0.992 - 1.139 100 0.99152 - 7.62 3.13270 172.06 0.00182 85.21 0.99168 - 2.93 200 0.98685 - 15.12 3.11006 164.12 0.00350 78.32 0.99047 - 5.83 300 0.97979 - 22.49 3.06743 156.24 0.00511 73.45 0.98876 - 8.72 400 0.97176 - 29.74 3.01634 148.56 0.00664 69.12 0.98662 - 11.57 500 0.96209 - 36.76 2.95125 141.00 0.00805 64.73 0.98424 - 14.39 600 0.95108 - 43.63 2.87828 133.56 0.00931 60.38 0.98168 - 17.21 700 0.93915 - 50.35 2.79946 126.28 0.01042 56.16 0.97884 - 19.97 800 0.92742 - 56.82 2.71508 119.20 0.01141 52.16 0.97630 - 22.68 900 0.91573 - 62.95 2.62937 112.29 0.01224 48.31 0.97350 - 25.42 1000 0.90429 - 68.83 2.54239 105.56 0.01297 44.63 0.97115 - 28.14 table 10. noise data for ampli?er a v ds(a) =5v; v g2-s =4v; i d(a) = 19 ma; v ds(b) =0v; v g1-s(b) =0v; t amb =25 c; typical values; unless otherwise speci?ed. f (mhz) nf min (db) g opt r n (ratio) (ratio) (deg) 400 0.9 0.77 22.7 0.65 800 1.1 0.73 45.75 0.62
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 11 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 8.2 dynamic characteristics for ampli?er b [1] for the mosfet not in use: v g1-s(a) = 0 v; v ds(a) =0 v. [2] calculated from s-parameters. [3] measured in figure 34 test circuit. table 11. dynamic characteristics for ampli?er b [1] common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 15 ma; unless otherwise speci?ed. symbol parameter conditions min typ max unit | y fs | forward transfer admittance f = 100 mhz; t j =25 c253040ms c iss(g1) input capacitance at gate1 f = 100 mhz [2] - 2.1 2.6 pf c iss(g2) input capacitance at gate2 f = 100 mhz [2] - 3.4 - pf c oss output capacitance f = 100 mhz [2] - 0.85 - pf c rss reverse transfer capacitance f = 100 mhz [2] -30-ff g tr transducer power gain b s =b s(opt) ; b l =b l(opt) f = 200 mhz; g s = 2 ms; g l = 0.5 ms 31 35 39 db f = 400 mhz; g s = 2 ms; g l =1ms 28 32 36 db f = 800 mhz; g s = 3.3 ms; g l =1ms 26 30 34 db nf noise ?gure f = 11 mhz; g s = 20 ms; b s =0s - 3 - db f = 400 mhz; y s =y s(opt) - 1.1 1.7 db f = 800 mhz; y s =y s(opt) - 1.4 2.0 db xmod cross modulation input level for k = 1 %; f w = 50 mhz; f unw =60mhz [3] at 0 db agc 90 - - db m v at 10 db agc - 90 - db m v at 20 db agc - 98 - db m v at 40 db agc 102 105 - db m v
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 12 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 8.2.1 graphics for ampli?er b (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. (1) v g1-s(b) = 1.6 v. (2) v g1-s(b) = 1.5 v. (3) v g1-s(b) = 1.4 v. (4) v g1-s(b) = 1.3 v. (5) v g1-s(b) = 1.2 v. (6) v g1-s(b) = 1.1 v. (7) v g1-s(b) =1v. v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c. fig 17. ampli?er b: transfer characteristics; typical values fig 18. ampli?er b: output characteristics; typical values v g1-s (v) 0 2.0 1.6 0.8 1.2 0.4 001aag361 10 20 30 i d (ma) 0 (4) (5) (6) (7) (1) (2) (3) v ds (v) 06 4 2 001aag362 8 16 24 i d (ma) 0 (7) (6) (5) (4) (3) (2) (1)
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 13 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. fig 19. ampli?er b: gate1 current as a function of gate1 voltage; typical values fig 20. ampli?er b: forward transfer admittance as a function of drain current; typical values v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 =86k w (connected to v gg ); see figure 3 . fig 21. ampli?er b: drain current as a function of gate1 current; typical values fig 22. ampli?er b: drain current as a function of gate1 supply voltage; typical values v g1-s (v) 0 2.0 1.6 0.8 1.2 0.4 001aag363 40 60 20 80 100 i g1 ( m a) 0 (1) (2) (5) (7) (3) (4) (6) i d (ma) 032 24 816 001aag364 16 24 8 32 40 0 y fs (ms) (1) (2) (3) (4) (5) (7) (6) i g1 ( m a) 050 40 20 30 10 001aag365 8 12 4 16 20 i d (ma) 0 v gg (v) 05 4 23 1 001aag366 8 12 4 16 20 i d (ma) 0
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 14 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet (1) r g1 =47k w . (2) r g1 =56k w . (3) r g1 =68k w . (4) r g1 =82k w . (5) r g1 =86k w . (6) r g1 = 100 k w . (7) r g1 = 120 k w . (8) r g1 = 150 k w . (9) r g1 = 180 k w . v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 is connected to v gg ; see figure 3 . (1) v gg = 5.0 v. (2) v gg = 4.5 v. (3) v gg = 4.0 v. (4) v gg = 3.5 v. (5) v gg = 3.0 v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 =86k w (connected to v gg ); see figure 3 . fig 23. ampli?er b: drain current as a function of gate1 supply voltage and drain supply voltage; typical values fig 24. ampli?er b: drain current as a function of gate2 voltage; typical values v gg = v ds (v) 05 4 23 1 001aag367 10 15 5 20 25 i d (ma) 0 (1) (4) (5) (6) (7) (8) (9) (3) (2) v g2-s (v) 06 4 2 001aag368 8 16 24 i d (ma) 0 (5) (3) (2) (1) (4)
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 15 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet (1) v gg = 5.0 v. (2) v gg = 4.5 v. (3) v gg = 4.0 v. (4) v gg = 3.5 v. (5) v gg = 3.0 v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 =86k w (connected to v gg ); see figure 3 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 =86k w (connected to v gg ); f w = 50 mhz; f unw = 60 mhz; t amb =25 c; see figure 34 . fig 25. ampli?er b: gate1 current as a function of gate2 voltage; typical values fig 26. ampli?er b: unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 =86k w (connected to v gg ); f = 50 mhz; t amb =25 c; see figure 34 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 =86k w (connected to v gg ); f = 50 mhz; t amb =25 c; see figure 34 . fig 27. ampli?er b: gain reduction as a function of agc voltage; typical values fig 28. ampli?er b: drain current as a function of gain reduction; typical values 001aag369 v g2-s (v) 06 4 2 20 30 10 40 50 i g1 ( m a) 0 (5) (3) (2) (1) (4) 001aag370 gain reduction (db) 060 40 20 100 90 110 120 v unw (db m v) 80 v agc (v) 04 3 12 001aag371 30 20 40 10 0 50 gain reduction (db) 001aag372 gain reduction (db) 060 40 20 12 6 18 24 i d (ma) 0
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 16 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =15ma v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =15ma fig 29. ampli?er b: input admittance as a function of frequency; typical values fig 30. ampli?er b: forward transfer admittance and phase as a function of frequency; typical values v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =15ma v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =15ma fig 31. ampli?er b: reverse transfer admittance and phase as a function of frequency; typical values fig 32. ampli?er b: output admittance as a function of frequency; typical values 001aag373 10 1 10 2 b is , g is (ms) 10 - 1 f (mhz) 10 10 3 10 2 b is g is f (mhz) 10 10 3 10 2 001aag374 - 10 - 10 2 - 1 j fs (deg) 10 10 2 1 y fs (ms) y fs j fs 001aag375 10 2 10 10 3 y rs ( m s) 1 - 10 2 - 10 - 10 3 j rs (deg) - 1 f (mhz) 10 10 3 10 2 y rs j rs 001aag376 1 10 - 1 10 b os , g os (ms) 10 - 2 f (mhz) 10 10 3 10 2 b os g os
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 17 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 8.2.2 scattering parameters for ampli?er b 8.2.3 noise data for ampli?er b table 12. scattering parameters for ampli?er b v ds(b) =5v; v g2-s =4v; i d(b) = 15 ma; v ds(a) =0v;v g1-s(a) =0v; t amb = 25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) magnitude (ratio) angle (deg) 40 0.9830 - 3.09 2.96410 176.88 0.00070 87.02 0.9920 - 1.22 100 0.98257 - 7.62 2.92951 171.69 0.00176 86.41 0.99190 - 3.22 200 0.97956 - 15.00 2.90869 163.43 0.00339 83.66 0.99064 - 6.42 300 0.97446 - 22.33 2.86877 155.20 0.00501 81.33 0.98894 - 9.59 400 0.96849 - 29.56 2.82073 147.13 0.00663 79.12 0.98688 - 12.74 500 0.96112 - 36.62 2.75891 139.15 0.00820 76.85 0.98454 - 15.88 600 0.95238 - 43.55 2.68790 131.26 0.00967 74.48 0.98181 - 19.02 700 0.94282 - 50.37 2.61038 123.50 0.01110 72.29 0.97880 - 22.13 800 0.93319 - 56.94 2.52719 115.92 0.01250 70.11 0.97585 - 25.20 900 0.92326 - 63.22 2.44054 108.46 0.01379 67.93 0.97175 - 28.30 1000 0.91325 - 69.31 2.35036 101.13 0.01506 65.65 0.96801 - 31.40 table 13. noise data for ampli?er b v ds(b) =5v; v g2-s =4v; i d(b) = 15 ma; v ds(a) =0v; v g1-s(a) =0v; t amb =25 c; typical values; unless otherwise speci?ed. f (mhz) nf min (db) g opt r n ( w ) (ratio) (deg) 400 1.1 0.72 22.83 0.66 800 1.4 0.68 46.42 0.64
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 18 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 9. test information fig 33. cross modulation test set-up for ampli?er a fig 34. cross modulation test set-up for ampli?er b 50 w 10 k w r gen 50 w r l 50 w 50 w r g1 4.7 nf 4.7 nf 4.7 nf g2 s g1b db da 4.7 nf 4.7 nf 4.7 nf g1a bf1208d v gg 0v v ds(b) 5v v ds(a) 5v v agc l2 2.2 m h l1 2.2 m h 001aag398 v i 50 w 10 k w r gen 50 w 50 w r g1 4.7 nf 4.7 nf 4.7 nf g2 s g1b db da 4.7 nf 4.7 nf 4.7 nf g1a bf1208d v gg 5v v ds(b) 5v v ds(a) 5v v agc l2 2.2 m h l1 2.2 m h r l 50 w 001aag399 v i
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 19 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 10. package outline fig 35. package outline sot666 unit b p cd e e 1 h e l p w references outline version european projection issue date 04-11-08 06-03-16 iec jedec jeita mm 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 dimensions (mm are the original dimensions) 0.3 0.1 sot666 b p pin 1 index d e 1 e a l p detail x h e e a s 0 1 2 mm scale a 0.6 0.5 c x 123 4 5 6 plastic surface-mounted package; 6 leads sot666 ys w m a
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 20 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 11. abbreviations 12. revision history table 14. abbreviations acronym description agc automatic gain control dc direct current mosfet metal-oxide semiconductor field-effect transistor uhf ultra high frequency vhf very high frequency table 15. revision history document id release date data sheet status change notice supersedes bf1208d_1 20070516 product data sheet - -
bf1208d_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 16 may 2007 21 of 22 nxp semiconductors bf1208d dual n-channel dual gate mosfet 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors bf1208d dual n-channel dual gate mosfet ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 16 may 2007 document identifier: bf1208d_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 5 8.1 dynamic characteristics for ampli?er a. . . . . . . 5 8.1.1 graphics for ampli?er a . . . . . . . . . . . . . . . . . . 6 8.1.2 scattering parameters for ampli?er a . . . . . . . 10 8.1.3 noise data for ampli?er a . . . . . . . . . . . . . . . . 10 8.2 dynamic characteristics for ampli?er b. . . . . . 11 8.2.1 graphics for ampli?er b . . . . . . . . . . . . . . . . . 12 8.2.2 scattering parameters for ampli?er b . . . . . . . 17 8.2.3 noise data for ampli?er b . . . . . . . . . . . . . . . . 17 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 18 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 20 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 21 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 21 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 14 contact information. . . . . . . . . . . . . . . . . . . . . 21 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

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